PHOTOINDUCED LASER EFFECTS IN INDIUM NITRIDE FILM

The optical nonlinear absorption properties in sputtering Indium nitride (InN) film were investigated under the excitations of nanosecond, picosecond and femtosecond pulsed lasers by open-aperture transmission Z-scan technique (TZ-scan). Under the condition of hν > Eg, the saturable absorption (SA) phenomena induced by one-photon transition were observed in both nanosecond and picosencond pulsed TZ-scan measurements. When 2hν > Eg > hν, the film presented SA due to the two-photon transition under the excitation of picosecond laser. However, at femtosecond 800 nm, the film showed the two-photon absorption (TPA) instead of SA, and the TPA coefficient tended to a saturable value as the excitation intensity increased. The results indicate that the InN film is a kind of good saturable absorber.

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