Cosmic and terrestrial single-event radiation effects in dynamic random access memories
暂无分享,去创建一个
[1] A. B. Campbell,et al. Charge Transport by the Ion Shunt Effect , 1986, IEEE Transactions on Nuclear Science.
[2] P. Mcnulty,et al. Effectiveness of CMOS Charge Reflection Barriers in Space Radiation Environments , 1987, IEEE Transactions on Nuclear Science.
[3] Kiyoo Itoh,et al. A corrugated capacitor cell (CCC) for megabit dynamic MOS memories , 1982 .
[4] R. Koga,et al. Single Event Error Immune CMOS RAM , 1982, IEEE Transactions on Nuclear Science.
[5] R.H. Dennard,et al. Evolution of the MOSFET dynamic RAM—A personal view , 1984, IEEE Transactions on Electron Devices.
[6] Ashwin H. Shah,et al. TITE RAM: A NEW SOI DRAM GAIN CELL FOR MBIT DRAM's. , 1984 .
[7] K. Arimoto,et al. A built-in Hamming code ECC circuit for DRAMs , 1989 .
[8] P. Chatterjee,et al. A trench transistor cross-point DRAM cell , 1985, 1985 International Electron Devices Meeting.
[9] J. Ziegler,et al. Effect of Cosmic Rays on Computer Memories , 1979, Science.
[10] H. Kalter,et al. An Experimental 120 NS One-Half Megabit Dynamic RAM with Plate Push Cell , 1983, 1983 Symposium on VLSI Technology. Digest of Technical Papers.
[11] H. R. Schwartz,et al. Single-Event Upset (SEU) in a Dram with On-Chip Error Correction , 1987, IEEE Transactions on Nuclear Science.
[12] B. D. Shafer,et al. The design of radiation-hardened ICs for space: a compendium of approaches , 1988, Proc. IEEE.
[13] A. B. Campbell,et al. SEU flight data from the CRRES MEP , 1991 .
[14] D. Binder,et al. Satellite Anomalies from Galactic Cosmic Rays , 1975, IEEE Transactions on Nuclear Science.
[15] K. P. Ray,et al. Test of SEU algorithms against preliminary CRRES satellite data , 1991 .
[16] N.C.C. Lu,et al. A new failure mode of radiation-induced soft errors in dynamic memories , 1988, IEEE Electron Device Letters.
[17] D.S. Yaney,et al. The use of thin epitaxial silicon layers for MOS VLSI , 1981, 1981 International Electron Devices Meeting.
[18] R. D. Rasmussen. Spacecraft electronics design for radiation tolerance , 1988 .
[19] Shojiro Asai,et al. A soft error rate model for MOS dynamic RAM's , 1982 .
[20] T. May,et al. Alpha-particle-induced soft errors in dynamic memories , 1979, IEEE Transactions on Electron Devices.
[21] K. Fujishima,et al. Cell-Plate Line Connecting Complementary Bitline (c/sup 3/) Architecture For Battery Operating DRAMs , 1991, 1991 Symposium on VLSI Circuits.
[22] K. Yamaguchi,et al. Two-Dimensional Numerical Model of Memory Devices with a Corrugated Capacitor Cell Structure , 1985, IEEE Journal of Solid-State Circuits.
[23] T. May,et al. A New Physical Mechanism for Soft Errors in Dynamic Memories , 1978, 16th International Reliability Physics Symposium.
[24] G.A. Sai-Halasz. Cosmic ray induced soft error rate in VLSI circuits , 1983, IEEE Electron Device Letters.
[25] J. Yamada. Selector-line merged built-in ECC technique for DRAMs , 1987 .
[26] K. Sonoda,et al. Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation , 1993 .
[27] K. Itoh. Trends in megabit DRAM circuit design , 1990 .
[28] Eiji Takeda,et al. Alpha-Particle-Induced Source-Drain Penetration (ALPEN) Effects -A New Soft Error Phenomenon- , 1987 .
[29] Hideto Hidaka,et al. Cell-plate line connecting complementary bit-line (C/sup 3/) architecture for battery-operated DRAMs , 1992 .
[30] Lloyd W. Massengill,et al. Single event mirroring and DRAM sense amplifier designs for improved single-event-upset performance , 1994 .
[31] Toshio Yamada,et al. A 4-Mbit DRAM with 16-bit concurrent ECC , 1988 .
[32] R. H. Dennard,et al. Alpha-particle-induced soft error rate in VLSI circuits , 1982 .
[33] W. T. Corbett,et al. Radiation-Hard Design Principles Utilized in CMOS 8085 Microprocessor Family , 1983, IEEE Transactions on Nuclear Science.
[34] R. Baumann,et al. Boron compounds as a dominant source of alpha particles in semiconductor devices , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.
[35] S. Kirkpatrick. Modeling diffusion and collection of charge from ionizing radiation in silicon devices , 1979, IEEE Transactions on Electron Devices.
[36] H. Masuda,et al. An n-well CMOS dynamic RAM , 1982, IEEE Transactions on Electron Devices.
[37] Kiyoo Itoh,et al. ALPHA-PARTICLE-INDUCED CHARGE COLLECTION IN SCALED DRAM CELLS WITH ADVANCED STRUCTURES , 1990 .
[38] Yoshio Matsuda,et al. MECHANISM OF BIT LINE MODE SOFT ERROR FOR DRAM. , 1987 .
[39] Pinaki Mazumder. An on-chip ECC circuit for correcting soft errors in DRAMs with trench capacitors , 1992 .
[40] J. C. Pickel,et al. Cosmic Ray Induced in MOS Memory Cells , 1978, IEEE Transactions on Nuclear Science.
[41] T. J. O'Gorman. The effect of cosmic rays on the soft error rate of a DRAM at ground level , 1994 .
[42] James H. Adams,et al. The Natural Radiation Environment inside Spacecraft , 1982, IEEE Transactions on Nuclear Science.
[43] Soft error susceptibility mapping of DRAMs using a high-energy nuclear microprobe , 1993 .
[44] Kiyoo Itoh,et al. Alpha-particle-induced charge collection measurements for megabit DRAM cells , 1989 .
[45] W. Reczek,et al. Design Concept for Radiation Hardening of Low Power and Low Voltage Dynamic Memories , 1994, ESSCIRC '94: Twientieth European Solid-State Circuits Conference.
[46] Y. Hokari,et al. Buried storage electrode (BSE) cell for megabit DRAMs , 1985, 1985 International Electron Devices Meeting.
[47] A.M. Mohsen,et al. Alpha-particle-induced charge collection measurements and the effectiveness of a novel p-well protection barrier on VLSI memories , 1985, IEEE Transactions on Electron Devices.
[48] E. G. Stassinopoulos,et al. Space radiation evaluation of 16 Mbit DRAMs for mass memory applications , 1994 .
[49] John A. Zoutendyk,et al. Single Event Upset Immune Integrated Circuits for Project Galileo , 1985, IEEE Transactions on Nuclear Science.
[50] Robert Ecoffet,et al. Heavy ion induced single hard errors on submicronic memories (for space application) , 1992 .
[51] Eugene Normand,et al. Investigation and Characterization of SEU Effects and Hardening Strategies in Avionics. , 1995 .
[52] H. R. Schwartz,et al. TRENDS IN DEVICE SEE SUSCEPTIBILITY FROM HEAVY IONS , 1995, Proceedings of 1995 IEEE Nuclear and Space Radiation Effects Conference (NSREC'95).
[53] G.A. Sai-Halasz,et al. A buried N-grid for protection against radiation induced charge collection in electronic circuits , 1981, 1981 International Electron Devices Meeting.
[54] J.A. Seitchik,et al. Alpha-particle-induced charge transfer between closely spaced memory cells , 1986, IEEE Transactions on Electron Devices.
[55] T. R. Oldham,et al. Charge Funneling in N- and P-Type Si Substrates , 1982, IEEE Transactions on Nuclear Science.
[56] R. Barry,et al. Single event effect proton and heavy ion test results in support of candidate NASA programs , 1995, Proceedings of 1995 IEEE Nuclear and Space Radiation Effects Conference (NSREC'95).
[57] Lloyd W. Massengill,et al. Effects of process parameter distributions and ion strike locations on SEU cross-section data (CMOS SRAMs) , 1993 .
[58] A. Taber,et al. Single event upset in avionics , 1993 .
[59] R. Harboe-Sorensen,et al. Radiation testing of flight lots for MARS-94 covering-semiconductor types as 4 M-BIT DRAM, 256 K-BIT SRAM, 256 K-BIT EEPROM and a 53C90 SCSI controller , 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).
[60] Allan H. Johnston,et al. A new class of single event hard errors [DRAM cells] , 1994 .
[61] D. Critchlow,et al. A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's , 1986 .
[62] R. J. McPartland. Circuit simulations of alpha-particle-induced soft errors in MOS dynamic RAMs , 1981 .
[63] K. Fujishima,et al. A storage-node-boosted RAM with word-line delay compensation , 1982, IEEE Journal of Solid-State Circuits.
[64] A.F. Tasch,et al. The Hi-C RAM cell concept , 1977, IEEE Transactions on Electron Devices.
[65] J.D. Meindl,et al. Physical limits of VLSI dRAM's , 1985, IEEE Transactions on Electron Devices.
[66] T. May. Soft Errors in VLSI: Present and Future , 1979 .
[67] Pinaki Mazumder,et al. Design of a Fault-Tolerant Three-Dimensional Dynamic Random-Access Memory with On-Chip Error-Correcting Circuit , 1993, IEEE Trans. Computers.
[68] R. Harboe-Sorensen,et al. Heavy ion, proton and Co-60 radiation evaluation of 16 Mbit DRAM memories for space application , 1995, Proceedings of 1995 IEEE Nuclear and Space Radiation Effects Conference (NSREC'95).
[69] D. Bouldin. The measurement of alpha particle emissions from semiconductor memory materials , 1981 .
[70] D. Yaney,et al. Alpha particle tracks in silicon and their effect on dynamic MOS RAM reliability , 1978, 1978 International Electron Devices Meeting.
[71] Lloyd W. Massengill,et al. A proposed SEU tolerant dynamic random access memory (DRAM) cell , 1994 .
[72] K. Jenkins,et al. Ion microbeam probing of sense amplifiers to analyze single event upsets in a CMOS DRAM , 1991 .
[73] Kiyoo Itoh,et al. A diagonal active-area stacked capacitor DRAM cell with storage capacitor on bit line , 1990 .
[74] S. Duzellier,et al. Heavy Ton / Proton Test Results On High Integrated Memories , 1993, 1993 IEEE Radiation Effects Data Workshop.
[75] Sohei Manabe,et al. Impact of the minority carrier outflow (MCO) effect on the /spl alpha/-particle-induced soft error of scaled DRAMs , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[76] Y. Kamigaki,et al. An n-Well CMOS Dynamic RAM , 1982, IEEE Journal of Solid-State Circuits.
[77] J. Zoutendyk,et al. Characterization of multiple-bit errors from single-ion tracks in integrated circuits , 1989 .
[78] R. Chitty,et al. On the suitability of non-hardened high density SRAMs for space applications , 1991 .
[79] John P. Retzler. Fault Tolerant Memories for Single Particle Radiation Effects , 1981, IEEE Transactions on Nuclear Science.
[80] P. Garnier,et al. Total dose failures in advanced electronics from single ions , 1993 .
[81] E. A. Burke,et al. Calculation of Cosmic-Ray Induced Soft Upsets and Scaling in VLSI Devices , 1982, IEEE Transactions on Nuclear Science.
[82] A. F. Tasch,et al. Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMs , 1989, Proc. IEEE.
[83] John A. Zoutendyk,et al. Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers , 1990 .
[84] Kiyoo Itoh,et al. A 1.5 V DRAM for battery-based applications , 1989, IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers.
[85] H. R. Schwartz,et al. Overview Of Device See Susceptibility From Heavy Ions , 1993, 1993 IEEE Radiation Effects Data Workshop.