论文信息 - 112 Gb/s PAM4 Transmission over 2 km SMF Using a C-band GeSi Electro-Absorption Modulator

112 Gb/s PAM4 Transmission over 2 km SMF Using a C-band GeSi Electro-Absorption Modulator

We demonstrate 112 Gb/s 4-level pulse amplitude modulation over 2 km of SMF using a C-band GeSi electro-absorption modulator for data-center interconnects. Also, we present first results towards 400 Gb/s wavelength division multiplexed transmission.

[1] Joris Van Campenhout,et al. 50Gb/s C-band GeSi waveguide electro-absorption modulator , 2016, 2016 Optical Fiber Communications Conference and Exhibition (OFC).

[2] Jochem Verbist,et al. DAC-less and DSP-free PAM-4 Transmitter at 112 Gb/s with Two Parallel GeSi Electro-Absorption Modulators , 2017, 2017 European Conference on Optical Communication (ECOC).

[3] Jinzhong Yu,et al. 44-Gb/s Silicon Microring Modulators Based on Zigzag PN Junctions , 2012, IEEE Photonics Technology Letters.

[4] M. Chagnon,et al. Experimental parametric study of 128 Gb/s PAM-4 transmission system using a multi-electrode silicon photonic Mach Zehnder modulator. , 2017, Optics express.

[5] Po Dong,et al. High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators. , 2012, Optics express.

[6] Mohammed Y. S. Sowailem,et al. 168-Gb/s Single Carrier PAM4 Transmission for Intra-Data Center Optical Interconnects , 2017, IEEE Photonics Technology Letters.