论文信息 - THz/sub-THz direct detection detector on the basis of electron/hole heating in MCT layers

THz/sub-THz direct detection detector on the basis of electron/hole heating in MCT layers

Direct detection thin-film bipolar narrow-gap Hg1?xCdxTe semiconductor is considered as a waveguide THz/sub-THz bolometer. The response of such thin layer detectors was calculated and measured in the ? = 0.037?1.54 THz frequency range at T ? 70?300 K. Noise equivalent power of such detectors can reach NEP300 K ? 4???10?10?W Hz?1/2?and NEP100 K ? 10?11?in the low-frequency part of the sub-THz spectral range.

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