The effect of self-heating on hot-carrier effects in deep submicron SOI/NMOS

This paper reports on the effect of self-heating on hot-carrier effects in deep submicron SOI/NMOS. The impact of the hot carrier is studied as a function of buried oxide thickness. The simulation results show that the self-heating in deep submicron SOI/NMOS becomes serious with the buried oxide thickness increasing, and thus leads to the peak electric field down in the channel region near drain, which decreases the hot-carrier effects in short channel devices.