Single-photon detector operating under extremely high background photon flux conditions

Abstract We are reporting our results in research and development in the field of avalanche semiconductor single-photon detectors and their application. Our goal was a development of a solid-state photon-counting detector capable of high-precision photon arrival time tagging in extremely harsh operating conditions. The background photon flux exceeding 109 photons per second hitting the detector active area should not avoid the useful signal detection and recognition on the signal level of units of photons per second. This is background photon flux about two orders of magnitude higher than what the conventional solid-state photon counters accept. The detection timing resolution should be better than 100 ps and the delay stability should be on picosecond level. We have developed and tested the active quenched and gated avalanche structure on silicon providing the required features in connection with the K14 detection chips. The detector is capable of gated operation under the conditions of background photon flux of 5×109 photons per second. The operational detector tolerates long term exposures to the input photon flux exceeding 1015 photons (>1 mW) per second without damage.