论文信息 - Self‐assembled monolayer electron beam resist on GaAs

Self‐assembled monolayer electron beam resist on GaAs

We present results on electron beam exposure of a self‐assembled monolayer film as a self‐developing positive resist on GaAs. A 1.5 nm thick monolayer of n‐octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed a electron beam sensitivity of about 100 μC/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.

[1] David L. Allara,et al. A New Class of Organized Self- Assembled Monolayers: Alkane Thiols on GaAs (100) , 1992 .

[2] D. Kern,et al. Experimental evaluation of a scanning tunneling microscope‐microlens system , 1991 .

[3] E. Dobisz,et al. Scanning tunneling microscope lithography: A solution to electron scattering , 1991 .

[4] J M Calvert,et al. Deep UV photochemistry of chemisorbed monolayers: patterned coplanar molecular assemblies. , 1991, Science.

[5] G M Whitesides,et al. Molecular-Level Control over Surface Order in Self-Assembled Monolayer Films of Thiols on Gold , 1988, Science.

[6] Hyuk Yu,et al. Molecular monolayers and films. A panel report for the Materials Sciences Division of the Department of Energy , 1987 .

[7] R. Nuzzo,et al. Fundamental Studies of the Chemisorption of Organosulfur Compounds on Au( 111). Implications for Molecular Self-Assembly on Gold Surfaces , 1987 .

[8] Harold G. Craighead,et al. 10‐nm linewidth electron beam lithography on GaAs , 1983 .