Current mismatch in paralleled phases of high power SiC modules due to threshold voltage unsymmetry and different gate-driver concepts

This paper analyzes the influence of the threshold voltage on the parallel connection of three phases of a high power SiC MOSFET module. The current mismatch and the resulting switching loss distribution between paralleled phases will be investigated. Two different gate-drive circuit concepts will be tested. The influence of the choice of the gate-resistor arrangement will be presented regarding the dynamic current distribution and switching losses.

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