Fully Solution Processed Bottom-Gate Organic Field-Effect Transistor With Steep Subthreshold Swing Approaching the Theoretical Limit

This letter realizes both large gate dielectric capacitance and reduced sub-gap density of states at the channel in the same organic field effect transistor (OFET) structure by adopting optimized low-k/high-k bilayer gate dielectric. Subthreshold swing (<italic>SS</italic>) as small as 64 mV dec<inline-formula> <tex-math notation="LaTeX">$^{-1}$ </tex-math></inline-formula> can be achieved with a thick (>360 nm) gate dielectric layer. This is the smallest <italic>SS</italic> value reported so far for all reported low voltage OFETs, and is even comparable with that of 22 nm technology node Si-FETs. The device can thus be switched within a very small voltage swing of 0.8 V, while having an ON/OFF ratio larger than 10<sup>5</sup>. The device also shows excellent operational and storage stabilities.

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