论文信息 - IIIa-2 characterization of electronic gate current in IGFETS operating in the linear and saturation regions - 字舞流文

IIIa-2 characterization of electronic gate current in IGFETS operating in the linear and saturation regions

P. Cottrell | T. Ning | R. Troutman | R.R. Troutman | T.H. Ning | P.E. Cottrell

[1] H. Hara,et al. A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate Oxide , 1970 .