A 90 nm CMOS V-Band Low-Noise Active Balun With Broadband Phase-Correction Technique

This paper presents a V-band low-noise active balun with broadband phase-correction technique (PCT). The proposed technique effectively mitigates the phase deviation of active balun caused by parasitic imbalance and circuit mismatch. This technique is insensitive to frequency, which makes the operation frequency of active balun with the PCT can be extended to millimeter-wave (MMW) band. Within the low noise current-reuse pre-amplifier, this active balun circuit can be employed as low-noise amplifier as well. The measured phase error keeps less than 10 degrees from 50 GHz to 67 GHz, which demonstrates the robust calibration of phase error at MMW frequency. The measured voltage gain and noise figure at 63 GHz are 17.6 dB and 8.6 dB, respectively. The core power consumption is 19 mW from 1.4 V supply voltage with a core area of 0.275 mm2.

[1]  K. Soumyanath,et al.  A 64 GHz LNA With 15.5 dB Gain and 6.5 dB NF in 90 nm CMOS , 2008, IEEE Journal of Solid-State Circuits.

[2]  Chorng-Kuang Wang,et al.  A 60-GHz Phased Array Receiver Front-End in 0.13-$\mu {\hbox{m}}$ CMOS Technology , 2009, IEEE Transactions on Circuits and Systems I: Regular Papers.

[3]  Chau-Ching Chiong,et al.  A DC-21 GHz Low Imbalance Active Balun Using Darlington Cell Technique for High Speed Data Communications , 2009, IEEE Microwave and Wireless Components Letters.

[4]  J. Laskar,et al.  A 20 GHz low noise amplifier with active balun in a 0.25 um SiGe BICMOS technology , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

[5]  B. Nauta,et al.  Wideband Balun-LNA With Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling , 2008, IEEE Journal of Solid-State Circuits.

[6]  J. Laskar,et al.  A 20-GHz low-noise amplifier with active balun in a 0.25-/spl mu/m SiGe BICMOS technology , 2004, IEEE Journal of Solid-State Circuits.

[7]  B. Jung,et al.  A 3-to-5 GHz UWB LNA with a low-power balanced active balun , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

[8]  M. Ferndahl,et al.  The Matrix Balun—A Transistor-Based Module for Broadband Applications , 2009, IEEE Transactions on Microwave Theory and Techniques.

[9]  Chorng-Kuang Wang,et al.  A low power high reliability dual-path noise-cancelling LNA for WSN applications , 2010, IEEE Custom Integrated Circuits Conference 2010.

[10]  Chorng-Kuang Wang,et al.  A 63 GHz low-noise active balun with broadband phase-correction technique in 90 nm CMOS , 2010, 2010 IEEE Asian Solid-State Circuits Conference.

[11]  Kenichi Maruhashi,et al.  TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOS , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[12]  Huei Wang,et al.  A 2–40 GHz Active Balun Using 0.13 $\mu{\rm m}$ CMOS Process , 2009 .

[13]  Kooho Jung,et al.  Broadband Active Balun Using Combined Cascode–Cascade Configuration , 2008, IEEE Transactions on Microwave Theory and Techniques.

[14]  Kwang-Eui Pyun,et al.  A low noise amplifier for a multi-band and multi-mode handset , 1998, 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182).

[15]  I. Seto,et al.  A 60-GHz CMOS Receiver Front-End With Frequency Synthesizer , 2008, IEEE Journal of Solid-State Circuits.

[16]  Danilo Manstretta,et al.  A low-noise active balun with IM2 cancellation for multiband portable DVB-H receivers , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[17]  Huei Wang,et al.  A 2–40 GHz Active Balun Using 0.13 $\mu{\rm m}$ CMOS Process , 2009, IEEE Microwave and Wireless Components Letters.