论文信息 - 1D physically based non-quasi-static analog behavioral BJT model for SPICE

1D physically based non-quasi-static analog behavioral BJT model for SPICE

A compact 1D non-quasi-static BJT model (NQS BJT) based on the analog behavioral modeling capabilities of the SPICE simulator is described. The NQS BJT model parameters are derived directly from the physical device structure. A momentum relaxation time parameter is also included as equivalent inductivity, yielding more accurate prediction of unity gain frequency and phase characteristics. The efficiency of the novel NQS model is demonstrated by comparison with the standard Gummel-Poon model and experimental results.

N. Jankovic | T. Pesic | J. Karamarkovic

[1] N.D. Jankovic,et al. Non-quasi-static bipolar transistor models for circuit simulators , 1995, Proceedings of International Conference on Microelectronics.

[2] N. Jankovic,et al. Transmission‐line equivalent curcuit model of minority carrier transient current in quasi‐neutral silicon layers including effects , 1995 .

[3] N.D. Jankovic,et al. Transient analysis of BJT using all injection level TLEC model , 2000, 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400).

[4] R. E. Thomas,et al. Carrier mobilities in silicon empirically related to doping and field , 1967 .

[5] Robert G. Swartz,et al. The design and characterization of nonoverlapping super self-aligned BiCMOS technology , 1991 .

[6] T.V. Pesic,et al. An analytical approach to Kirk effect modelling , 2000, 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486).

[7] J. S. Hamel,et al. Trade-off between emitter resistance and current gain in polysilicon emitter bipolar transistors with intentionally grown interfacial oxide layers , 1992, IEEE Electron Device Letters.