论文信息 - Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown

Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown

Progressive breakdown observed in CMOS devices with ultra thin gate oxides can significantly increase the time dependent dielectric breakdown (TDDB) reliability margin of digital CMOS products. The voltage acceleration, the failure distribution of the progressive breakdown and the methodology for quantification of the progressive breakdown is discussed. Extensive experimental data are provided, enabling its implementation

M. Kerber | A. Kerber | T. Pompl | R. Duschl | M. Rohner

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