Linear RF polar modulated SiGe Class E and F power amplifiers

Two fully-integrated linearized polar modulated class E and F power amplifiers (PA) with switch-mode supply modulation are presented. The PAs are implemented in a 0.18mum SiGe BiCMOS process and can be used to transmit varying envelope RF signals operating at 870-920MHz. The class E PA gives a peak output power of 26.4dBm and a maximum efficiency of 62%. The class F PA gives peak output power of 23dBm with 53 % drain efficiency. When using delta modulation to control the switch-mode supply, the class F and E polar amplifiers give ACPRs for an EDGE input waveform (at 400kHz offset) of -46dBc and -37.7dBc respectively

[1]  M. Steyaert,et al.  A 1.75GHz GSM/EDGE polar modulated CMOS RF power amplifier , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

[2]  C.-H. Li,et al.  Maximum frequency and optimum performance of class E power amplifiers , 1994 .

[3]  F. Raab.  Maximum efficiency and output of class-F power amplifiers , 2001 .

[4]  D. Maksimović,et al.  DC-DC converter with fast transient response and high efficiency for low-voltage microprocessor loads , 1998, APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition.

[5]  S. Sathiakumar,et al.  Harmonic analysis of nondeterministic switching methods for DC-DC power converters , 2000 .

[6]  J. Staudinger.  An overview of efficiency enhancements with application to linear handset power amplifiers , 2002, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).

[7]  Gabor C. Temes,et al.  A first-order current-steering sigma-delta modulator , 1990, IEEE International Symposium on Circuits and Systems.

[8]  W. McFarland,et al.  An IC for linearizing RF power amplifiers using envelope elimination and restoration , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).