A new low temperature III–V multilayer growth technique: Vacuum metalorganic chemical vapor deposition

A new technique for multilayer growth by metalorganic chemical vapor deposition is described. The vacuum metalorganic chemical vapor deposition technique combines the low‐temperature growth capability of molecular beam epitaxy with the source handling system of chemical vapor deposition. The viability of the new technique is demonstrated by the growth of high‐mobility layers of GaAs, GaAs(1−x)P(x), and Ga(1−x)In(x)As at 570 °C. Room‐temperature mobilities of GaAs films as high as 4990 cm2/V s are obtained. Doping of both p‐type and n‐type films is demonstrated. GaAs shallow homojunction solar cells fabricated with this technique are described. Active‐area solar cell efficiencies as high as 19.6% are obtained with 6 ’’suns’’ AM2 concentrated light. This multilayer growth technique is particularly suited to the fabrication of multicolor solar cells.