论文信息 - Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs - 字舞流文

Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

A. Thean | N. Collaert | N. Waldron | D. Linten | B. Kaczer | M. Heyns | G. Groeseneken | J. Mitard | L. Witters | H. Arimura | J. Franco | A. Alian | S. Sioncke | A. Vais | V. Putcha | L. Nyns | D. Zhou