Electron and hole ionization rates in epitaxial silicon at high electric fields

Abstract Ionization rates for electrons and holes are extracted from photomultiplication measurements on silicon p+n mesa diodes for electric fields of 2·0 × 105−7·7 × 105 V/cm at temperatures of 22, 50, 100 and 150°C. These results are particularly pertinent to the analysis of high-frequency (∼ 100 GHz) silicon IMPATT diodes. The rates obtained here are in reasonable agreement with previously published data of van Overstraeten and DeMan, although slightly larger in magnitude. Calculated curves of breakdown voltage vs background doping level are presented using the room temperature ionization rates. Also a comparison is made to previously reported rates. The new rates provide a closer agreement between predicted and measured breakdown voltages for breakdown voltages less than 70 V.

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