Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

In this paper, a comprehensive evaluation of thermal behavior of the GaN vertical n+-n−-n-n+ Gunn diode have been carried out through simulation method. We explore the complex effects of various parameters on the device thermal performance through a microscopic analysis of electron movements. These parameters include operation bias, doping level, and length of the active region. The increase of these parameters aggravates the self-heating effect and degrades the electron domains, which therefore reduces the overall performance output of the diode. However, appropriate increase of the doping level of active region makes the lattice heat distribute more uniformly and improves the device performance. For the first time, we propose the transition domain, which is in between the dipole domain and accumulation layer, and stands for the degradation of the electron domain. We have also demonstrated that dual domains occur in the device with longer active region length and higher doping level under EB (Energy balance) model, which enhances the harmonics component. Electric and thermal behaviors analysis of GaN vertical Gunn diode makes it possible to optimize the device.

[1]  Michael S. Shur,et al.  Comparison of high field electron transport in GaN and GaAs , 1997 .

[2]  F. Gao,et al.  Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors , 2013, IEEE Transactions on Electron Devices.

[3]  M. Germain,et al.  Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design , 2006, IEEE Transactions on Electron Devices.

[4]  Samuel Graham,et al.  Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects , 2015, Microelectron. Reliab..

[5]  R. Quéré,et al.  Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements , 2016, 2016 11th European Microwave Integrated Circuits Conference (EuMIC).

[6]  D. Pavlidis,et al.  Large-signal microwave performance of GaN-based NDR diode oscillators , 2000 .

[7]  Dimitris Pavlidis,et al.  Technology aspects of GaN-based diodes for high-field operation , 2006 .

[8]  D. Cumming,et al.  Thermal Profiles Within the Channel of Planar Gunn Diodes Using Micro-Particle Sensors , 2017, IEEE Electron Device Letters.

[9]  D. Cumming,et al.  A 218‐GHz second‐harmonic multiquantum well GaAs‐based planar Gunn diodes , 2013 .

[10]  X. Tang,et al.  Physical analysis of thermal effects on the optimization of GaN Gunn diodes , 2009 .

[11]  R. J. Shul,et al.  Bulk GaN and AlGaN∕GaN heterostructure drift velocity measurements and comparison to theoretical models , 2005 .

[12]  Lin-An Yang,et al.  The modulation of multi-domain and harmonic wave in a GaN planar Gunn diode by recess layer , 2016 .

[14]  R. Trew,et al.  Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes , 2010, IEEE Sensors Journal.

[15]  Lars Samuelson,et al.  Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device , 2003 .

[16]  C. Bulutay,et al.  Gunn oscillations in GaN channels , 2004 .

[17]  A. Khalid,et al.  A Planar Gunn Diode Operating Above 100 GHz , 2007, IEEE Electron Device Letters.

[18]  Toru Toyabe,et al.  A new hot carrier simulation method based on full 3D hydrodynamic equations , 1989, International Technical Digest on Electron Devices Meeting.

[19]  Sonia H. Paluchowski Caldwell,et al.  Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications , 2011 .

[20]  Yiming Li,et al.  A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer , 2015 .

[21]  D. Cumming,et al.  Gunn oscillations in planar heterostructure diodes , 2008 .

[22]  J. Lü,et al.  Terahertz generation and chaotic dynamics in GaN NDR diode , 2004 .

[23]  J. Laskar,et al.  Thermal analysis of AlGaN-GaN power HFETs , 2003 .

[24]  Lin-An Yang,et al.  Use of AlGaN in the notch region of GaN Gunn diodes , 2009 .