Reflection high-energy electron diffraction intensity oscillations during Si growth on Ge(001) by solid source/molecular beam epitaxy
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[1] L. Kubler,et al. The influence of hydrogen during the growth of Ge films on Si(001) by solid source molecular beam epitaxy , 1998 .
[2] D. Aubel,et al. Ge segregation tested by X-ray photoelectron diffraction and surface atom titration during the first stage of Si heteroepitaxy on Ge(001)2 × 1 , 1996 .
[3] B. Joyce,et al. Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides , 1994 .
[4] D. Vvedensky,et al. Competitive kinetic processes during homoepitaxial growth on Ge(111) , 1993 .
[5] K. Miki,et al. Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? –Bi as a Surfactant with Small Self-Incorporation– , 1993 .
[6] P. Larsen,et al. Diffusion of Si into Ge studied by core level photoemission , 1989 .
[7] P. Larsen,et al. RHEED Studies of Growing Ge and Si Surfaces , 1988 .
[8] K. Kavanagh,et al. Thin epitaxial Ge-Si(111) films: Study and control of morphology , 1987 .
[9] G. Hashiguchi,et al. RHEED-intensity oscillations of alternating surface reconstructions during Si MBE growth on single-domain Si(001)-2×1 surface , 1987 .
[10] P. J. Dobson,et al. Dynamics of film growth of GaAs by MBE from Rheed observations , 1983 .