Quantum-Dot Semiconductor Optical Amplifiers With Polarization-Independent Gains in 1.5-$\mu$ m Wavelength Bands

We have demonstrated a polarization-independent gain in semiconductor optical amplifiers that have columnar quantum dots surrounded by strained side barriers in 1.5-mum wavelength bands. We obtained a polarization-dependent gain of 0.5 dB with a gain of 10 dB and a saturation output power of 18 dBm at a wavelength of 1.55 mum.

[1]  Yasuhiko Arakawa,et al.  Demonstration of transverse-magnetic dominant gain in quantum dot semiconductor optical amplifiers , 2008 .

[2]  Yasuhiko Arakawa,et al.  1.3–1.6 µm broadband polarization‐independent luminescence by columnar InAs quantum dots on InP(001) , 2006 .

[3]  Sanguan Anantathanasarn,et al.  Stacking and polarization control of wavelength-tunable (1.55 mum region) InAs/InGaAsP/InP (100) quantum dots , 2006 .

[4]  Mitsuru Sugawara,et al.  Artificial control of optical gain polarization by stacking quantum dot layers , 2006 .

[5]  Yasuhiko Arakawa,et al.  Controlling Polarization of 1.55-µm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001) , 2006 .

[6]  Mitsuru Sugawara,et al.  Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots , 2002 .

[7]  Tomoyuki Akiyama,et al.  Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots , 2004 .

[8]  Y. Arakawa,et al.  An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots , 2005, IEEE Photonics Technology Letters.

[9]  Y. Arakawa,et al.  Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers , 2004 .

[10]  Yasuhiko Arakawa,et al.  Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 µm bands , 2005 .