Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice‐matched to (001) InP Substrates

This paper presents the saturation behaviour of In – Ga – As melts with monocrystalline GaAs. The coulometric As-analysis confirmed that the source-seed-technique produces In – Ga – As melts of defined compositions. The growth results of the step cooling technique applying both the source-seed technique and the single phase melts are compared. In dieser Arbeit wird das Sattigungsverhalten von In – Ga – As Schmelzen mit einkristallinem GaAs beschrieben. Die Coulometrische As Analyse der Schmelzen zeigt, das die Sattigungstechnik Schmelzen definierter Zusammensetzung liefert. Der step cooling Prozes ergab sowohl fur die Nutzung der Sattigungstechnik als auch fur den Einsatz einphasiger Schmelzen gleiche Wachstumsergebnisse.

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