Neurotransistors for biomedical nanotechnology

Neurotransistors consisting of neuron-oxide-semiconductor field effect transistor (NOS-FET) have been investigated for the detection of Action Potentials and electrical output generated by neurons. This paper describes the design, fabrication process and characterization of the n-channel neurotransistor using silicon integrated circuit technology. The neurotransistors can be used to obtain noninvasive recording of neuronal electrical activity of the brain.