A Load-Shared CMOS Power Amplifier With Efficiency Boosting at Low Power Mode for Polar Transmitters

A load-shared CMOS power amplifier (PA) for 1.8-GHz polar transmitter applications has been implemented in standard 0.18-mum CMOS technology and fully characterized to demonstrate its efficiency boosting technique in low power mode. With the aid of cascode amplifiers, the load-shared configuration achieves efficiency improvement at low supply voltage in a polar transmitter. A differential class-E amplifier with a parallel resonant circuit is analyzed and incorporated in the load-shared PA. The load-shared configuration is composed of driver amplifiers (DAs) and PAs whose output loads are shared. The DA has a constant gate voltage biasing of a cascode amplifier for efficiency boosting, whereas the PA has a self-biased cascode configuration to be turned on and off by a supply voltage. The measurement results of the load-shared configuration show a drain efficiency increase from 6% to 30% at 16-dBm output power compared with a conventional self-biased cascode amplifier. The load-shared PA is reported with 35.6% of power-added efficiency and 32.2 dBm of output power at 1.88 GHz.

[1]  Ali Hajimiri,et al.  A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier , 2008, IEEE Journal of Solid-State Circuits.

[2]  Paul R. Gray,et al.  A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications , 1999 .

[3]  S. I. Long,et al.  A physically based analytic model of FET Class-E power amplifiers-designing for maximum PAE , 1999 .

[4]  Min-Chul Lee,et al.  A 2W CMOS Hybrid Switching Amplitude Modulator for EDGE Polar Transmitters , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[5]  Changkun Park,et al.  A 1.9-GHz Triple-Mode Class-E Power Amplifier for a Polar Transmitter , 2007, IEEE Microwave and Wireless Components Letters.

[6]  Ali Hajimiri,et al.  Fully integrated CMOS power amplifier design using the distributed active-transformer architecture , 2002, IEEE J. Solid State Circuits.

[7]  V. Krishnamurthy,et al.  A 900 MHz GSM PA in 250 nm CMOS with breakdown voltage protection and programmable conduction angle , 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

[8]  Changsik Yoo,et al.  A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-/spl mu/m CMOS , 2001 .

[9]  Songcheol Hong,et al.  A CMOS power amplifier for a UHF RFID reader , 2006, 2006 Asia-Pacific Microwave Conference.

[10]  P. Reynaert,et al.  A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE , 2005, IEEE Journal of Solid-State Circuits.

[11]  C.S. Park,et al.  An intelligent power amplifier MMIC using a new adaptive bias control circuit for W-CDMA applications , 2004, IEEE Journal of Solid-State Circuits.

[12]  Peter M. Asbeck,et al.  High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications , 1999 .

[13]  D. Rutledge,et al.  An optimized design of distributed active transformer , 2005, IEEE Transactions on Microwave Theory and Techniques.

[14]  Ali Hajimiri,et al.  Distributed active transformer-a new power-combining and impedance-transformation technique , 2002 .

[15]  백동현,et al.  Study on X - Ku band voltage controlled oscillators = 고주파(X - Ku 밴드 대역) 전압 제어 발진기의 연구 , 2003 .

[16]  David D. Wentzloff,et al.  IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology , 2010 .

[17]  Songcheol Hong,et al.  CMOS RF power amplifier with reconfigurable transformer , 2006 .

[18]  W. H. Doherty.  A New High Efficiency Power Amplifier for Modulated Waves , 1936 .

[19]  No Sokal,et al.  CLASS-E - NEW CLASS OF HIGH-EFFICIENCY TUNED SINGLE-ENDED SWITCHING POWER AMPLIFIERS , 1975 .

[20]  Songcheol Hong,et al.  A CMOS Active Balun Using Bond Wire Inductors and a Gain Boosting Technique , 2007, IEEE Microwave and Wireless Components Letters.

[21]  Domine M. W. Leenaerts,et al.  A 2.4-GHz 0.18-/spl mu/m CMOS self-biased cascode power amplifier , 2003 .

[22]  Michiel Steyaert,et al.  A 700-MHz 1-W fully differential CMOS class-E power amplifier , 2002 .

[23]  Frederick H. Raab,et al.  Idealized operation of the class E tuned power amplifier , 1977 .

[24]  Min-Chul Lee,et al.  A 2 W CMOS Hybrid Switching Amplitude Modulator for EDGE Polar Transmitters , 2007, IEEE Journal of Solid-State Circuits.

[25]  Songcheol Hong,et al.  Fully integrated 1.9‐GHz CMOS power amplifier for polar transmitter applications , 2006 .

[26]  Songcheol Hong,et al.  Demonstration of on-chip appended power amplifier for improved efficiency at low power region , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.