Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors

Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage (I-V) curves show a maximum resistance, R0, at zero bias and a minimum value, R∞, at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the I-V curves is reported and its temperature dependence analyzed.

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