A physics-based, dynamic electro-thermal model of silicon carbide power IGBT devices

This paper presents an algorithm to model the temperature dependent characteristics of SiC IGBT devices. In this method the electro-thermal behavior of the device is modeled using a numerical model. The proposed electro-thermal model is based on the Kraus IGBT electrical model coupled with the Elmore thermal model, which represents the propagation delay of the heat flux through the physical geometry of each layer. This model is used to evaluate the electro-thermal behavior and heat transfer performance of the device package. The parameters of the model are extracted from the three-dimensional finite element (FE) for computation of the transient thermal impedance. The accuracy of the developed model is verified by comparing the obtained results with those resulting from an analytical simulation and experimental results.

[1]  G. Majumdar,et al.  Some Key Researches on SiC Device Technologies and their Predicted Advantages , 2009 .

[2]  Jun Wang,et al.  Characterization, Modeling, and Application of 10-kV SiC MOSFET , 2008, IEEE Transactions on Electron Devices.

[3]  T. Funaki,et al.  A study on the high frequency operation of DC-DC converter with SiC DMOSFET , 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

[4]  Wolfgang Fichtner,et al.  Thermal component model for electrothermal analysis of IGBT module systems , 2001 .

[5]  R. Singh,et al.  Commercial impact of silicon carbide , 2008, IEEE Industrial Electronics Magazine.

[6]  Bruno Allard,et al.  Transient temperature measurements and modeling of IGBT's under short circuit , 1998 .

[7]  O. A. Mohammed,et al.  Functional ON/OFF behavioral modeling of power IGBT using system identification methods , 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[8]  D. Stephani.  Status, prospects and commercialization of SiC power devices , 2001, DRC 2001.

[9]  J.C. Zolper,et al.  Emerging silicon carbide power electronics components , 2005, Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005..

[10]  Ashwin M. Khambadkone,et al.  Improved comprehensive thermal model for power electronics building block applications , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[11]  Hyeong-Seok Oh,et al.  A new IGBT behavioral model , 2001 .

[12]  Osama Mohammed,et al.  Effects of different switching algorithms on the thermal behavior of IGBT modules under pulse-load conditions , 2010, IECON 2010 - 36th Annual Conference on IEEE Industrial Electronics Society.

[13]  John Glaser,et al.  Realizing the full potential of silicon carbide power devices , 2010, 2010 IEEE 12th Workshop on Control and Modeling for Power Electronics (COMPEL).