Influence of solubility switching mechanism on resist performance in molecular glass resists
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Clifford L. Henderson | Cheng-Tsung Lee | Wang Yueh | Richard A. Lawson | Laren M. Tolbert | Robert Whetsell
[1] R. Ayothi,et al. New PFOS Free Photoresist Systems for EUV Lithography , 2006 .
[2] Jin-Baek Kim,et al. Negative nanomolecular resists based on calix[4]resorcinarene , 2006, SPIE Advanced Lithography.
[3] Clifford L. Henderson,et al. Molecular glass photoresists containing photoacid generator functionality: a route to a single-molecule photoresist , 2007, SPIE Advanced Lithography.
[4] Kenji Gamo,et al. Novel Electron-Beam Molecular Resists with High Resolution and High Sensitivity for Nanometer Lithography , 2004 .
[5] Bruno M. La Fontaine,et al. Characterization of line-edge roughness in photoresist using an image fading technique , 2004, SPIE Advanced Lithography.
[6] Nelson Felix,et al. Materials for future lithography (Invited Paper) , 2005, SPIE Advanced Lithography.
[7] Seung Wook Chang,et al. Molecular glass photoresists for advanced lithography , 2006 .
[8] R. Ayothi,et al. Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography , 2006 .
[9] C. Grant Willson,et al. Effects of crosslinking agent on lithographic performance of negative-tone resists based on poly(p-hydroxystyrene) , 1997, Advanced Lithography.
[10] H. Binder,et al. A new environmentally stable protective group for deep UV resists: Methoxy(tetrahydropyranyl) ether , 2000 .
[11] Hiroshi Fukuda,et al. Distribution control of protecting groups and its effect on LER for EUV molecular resist , 2007, SPIE Advanced Lithography.
[12] Jin Baek Kim,et al. A positive-working alkaline developable photoresist based on partially tert-Boc-protected calix[4]resorcinarene and a photoacid generator , 2002 .
[13] Junyan Dai,et al. Molecular Glass Resists for High-Resolution Patterning , 2006 .
[14] Tsuguo Yamaoka,et al. The participation of the anion and alkyl substituent of diaryliodonium salts in photo-initiated cationic polymerization reactions , 2006 .
[15] Nobuaki Hayashi,et al. Acid-Catalyzed Reactions of Tetrahydropyranyl-Protected Polyvinylphenol in a Novolak-Resin-Based Positive Resist , 1992 .
[16] Atsuko Yamaguchi,et al. Development of electron beam resists based on amorphous polyphenols with low molecular weight and narrow dispersion , 2005, SPIE Advanced Lithography.
[17] Jean M. J. Fréchet,et al. Dendrimers with Thermally Labile End Groups: An Alternative Approach to Chemically Amplified Resist Materials Designed for Sub‐100 nm Lithography , 2000 .
[18] B. Kasemo,et al. Transmission electron microscopy 'windows' for nanofabricated structures , 2004 .
[19] Takashi Hattori,et al. Negative-tone polyphenol resist based on chemically amplified polarity change reaction with sub-50 nm resolution capability , 2006, SPIE Advanced Lithography.