Predictable quantum efficient detector: I. Photodiodes and predicted responsivity

The design and construction of a predictable quantum efficient detector (PQED), suggested to be capable of measuring optical power with a relative uncertainty of 1 ppm (ppm = parts per million), is presented. The structure and working principle of induced junction silicon photodiodes are described combined with the design of the PQED. The detector uses two custom-made large area photodiodes assembled into a light-trapping configuration, reducing the reflectance down to a few tens of ppm. A liquid nitrogen cryostat is used to cool the induced junction photodiodes to 78 K to improve the mobility of charge carriers and to reduce the dark current. To determine the predicted spectral responsivity, reflectance losses of the PQED were measured at room temperature and at 78 K and also modelled throughout the visible wavelength range from 400 nm to 800 nm. The measured values of reflectance at room temperature were 29.8 ppm, 22.8 ppm and 6.6 ppm at the wavelengths of 476 nm, 488 nm and 532 nm, respectively, whereas the calculated reflectances were about 4 ppm higher. The reflectance at 78 K was measured at the wavelengths of 488 nm and 532 nm over a period of 60 h during which the reflectance changed by about 20 ppm. The main uncertainty components in the predicted internal quantum deficiency (IQD) of the induced junction photodiodes are due to the reliability of the charge-carrier recombination model and the extinction coefficient of silicon at wavelengths longer than 700 nm. The expanded uncertainty of the predicted IQD is 2 ppm at 78 K over a limited spectral range and below 140 ppm at room temperature over the visible wavelength range. All the above factors are combined as the external quantum deficiency (EQD), which is needed for the calculation of the predicted spectral responsivity of the PQED. The values of the predicted EQD are below 70 ppm between the wavelengths of 476 nm and 760 nm, and their expanded uncertainties mostly vary between 10 ppm and 140 ppm, where the lowest uncertainties are obtained at low temperatures.

[1]  E. Ikonen,et al.  Simulations of a predictable quantum efficient detector with PC1D , 2012 .

[2]  Nigel P. Fox,et al.  A Cryogenic Radiometer for Absolute Radiometric Measurements , 1985 .

[3]  Erkki Ikonen,et al.  Predictable Quantum Efficient Detector II: Characterization Results , 2011 .

[4]  Seong H. Kim,et al.  Evolution of the adsorbed water layer structure on silicon oxide at room temperature. , 2005, The journal of physical chemistry. B.

[5]  Timo Varpula,et al.  Optical power calibrator based on a stabilized green He-Ne laser and a cryogenic absolute radiometer , 1989 .

[6]  H Fang,et al.  Methods to determine water vapour sorption on mass standards , 2004 .

[7]  Craig M. Herzinger,et al.  Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation , 1998 .

[8]  E. Taft The Optical Constants of Silicon and Dry Oxygen Oxides of Silicon at 5461A , 1978 .

[9]  P. M. Amirtharaj,et al.  Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface , 1994 .

[10]  Douglas B. Leviton,et al.  Temperature-dependent absolute refractive index measurements of synthetic fused silica , 2006, SPIE Astronomical Telescopes + Instrumentation.

[11]  S. Warren,et al.  Optical constants of ice from the ultraviolet to the microwave: A revised compilation , 2008 .

[12]  J. Geist,et al.  Silicon photodiode absolute spectral response self-calibration. , 1980, Applied optics.

[13]  J. Palmer Alternative Configurations for Trap Detectors , 1993 .

[14]  E. Ikonen,et al.  Reflectance calculations for a predictable quantum efficient detector , 2009 .

[15]  P. Meredith,et al.  Electronic and optoelectronic materials and devices inspired by nature , 2013, Reports on progress in physics. Physical Society.

[16]  B. D. Kay,et al.  H2O Condensation Coefficient and Refractive Index for Vapor-Deposited Ice from Molecular Beam and Optical Interference Measurements , 1996 .

[17]  A. Russell Schaefer,et al.  Complete collection of minority carriers from the inversion layer in induced junction diodes , 1981 .

[18]  John H. Lehman Pyroelectric Trap Detector for Spectral Responsivity Measurements , 1997 .

[19]  E. Ikonen,et al.  Reducing photodiode reflectance by Brewster-angle operation , 2008 .

[20]  A Berman,et al.  Water vapor in vacuum systems , 1996 .

[21]  T. Hansen,et al.  Silicon UV-Photodiodes Using Natural Inversion Layers , 1978 .

[22]  R. Newman,et al.  Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K , 1955 .

[23]  D. Aspnes,et al.  Optical Properties of the Interface between Si and Its Thermally Grown Oxide , 1979 .

[24]  P Kärhä,et al.  Nonlinearity measurements of silicon photodetectors. , 1998, Applied optics.

[25]  E. Zalewski,et al.  Silicon photodiode device with 100% external quantum efficiency. , 1983, Applied optics.

[26]  Martin A. Green,et al.  Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients , 2008 .

[27]  E. Ikonen,et al.  Predictable quantum efficient detector: II. Characterization and confirmed responsivity , 2013 .

[28]  A. R. Schaefer,et al.  Spectral response self-calibration and interpolation of silicon photodiodes. , 1980, Applied optics.

[29]  Giorgio Brida,et al.  Prospects for improving the accuracy of silicon photodiode self-calibration with custom cryogenic photodiodes , 2003 .