论文信息 - Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device - 字舞流文

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

T. Shimizu | S. Shingubara | A. Azuma | T. Ito | R. Nakajima | H. Yoshida | Tomohiro Shimizu