Preparation of Barium Titanate Film by Metal-Organic Chemical Vapor Deposition and its Thermodynamic Analysis

BaTiO 3 films were prepared on fused silica substrates by metal-organic chemical vapor deposition (MOCVD). Effect of deposition conditions on the composition, structure and morphology were studied. Thermodynamic calculations well predicted the relationship between deposition conditions and the phases of deposits. BaTiO 3 films in a single phase were obtained at 973 K and Ba/Ti ratio in the source gas of 0.25 to 0.35. The grain size of BaTiO 3 films increased with decreasing total pressure. BaTiO 3 film in thickness of about 1 μm had a relative dielectric constant of 480. The dielectric constant of the BaTiO 3 film showed the maximum value of 530 at 360 K.

[1]  C. L. Choy,et al.  Characterization of barium titanate ceramic/ceramic nanocomposite films prepared by a sol-gel process , 1999 .

[2]  R. Waser,et al.  Control of the morphology of CSD-prepared (Ba,Sr)TiO3 thin films , 1999 .

[3]  T. Claeson,et al.  Temperature and electric field dependence of the permittivity of Ba0.9Sr0.1TiO3 films epitaxially grown on cuprate electrodes , 1999 .

[4]  Y. H. Lee A role of energetic ions in RF-biased PECVD of TiO2 , 1998 .

[5]  A. Mansingh,et al.  Phase transition in sol-gel-derived barium titanate thin films , 1998 .

[6]  S. Bourgeois,et al.  SEM and XPS studies of titanium dioxide thin films grown by MOCVD , 1998 .

[7]  Chenglu Lin,et al.  Preparation and ferroelectric properties of BaTiO3 thin films by atmospheric-pressure metalorganic chemical vapor deposition , 1998 .

[8]  H. Funakubo,et al.  Residual Strain and Crystal Structure of BaTiO3–SrTiO3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition , 1997 .

[9]  Su-jin Chung,et al.  Thickness dependence of room temperature permittivity of polycrystalline BaTiO3 thin films by radio-frequency magnetron sputtering , 1997 .

[10]  L. Schultz,et al.  Electrode influence on the polarization properties of thin films prepared by off-axis laser deposition , 1997 .

[11]  Anthony R. West,et al.  Impedance Spectroscopy of Undoped BaTiO3 Ceramics , 1996 .

[12]  K. Iijima,et al.  Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation , 1994 .

[13]  In-Tae Kim,et al.  Preparation of BaTiO3 Thin Films by Metalorganic Chemical Vapor Deposition Using Ultrasonic Spraying , 1994 .

[14]  L. D. Rotter,et al.  Growth and characterization of barium titanate thin films prepared by metalorganic chemical vapor deposition , 1994 .

[15]  S. Desu Influence of Stresses on the Properties of Ferroelectric BaTiO3 Thin Films , 1993 .

[16]  Y. Yoon,et al.  Structural properties of BaTiO3 thin films on Si grown by metalorganic chemical vapor deposition , 1993 .

[17]  S. Krupanidhi,et al.  Plasma‐enhanced metalorganic chemical vapor deposition of BaTiO3 films , 1992 .

[18]  H. Nakazawa,et al.  Metalorganic Chemical Vapor Deposition of BaTiO3 Films on MgO(100) , 1991 .

[19]  G. Haertling Ferroelectric thin films for electronic applications , 1991 .

[20]  G. Arlt,et al.  Dielectric properties of fine‐grained barium titanate ceramics , 1985 .