Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high‐field stressing

The location of positive trapped charge in the dry thermally grown films of SiO2 on Si in MOS structures has been investigated by combining the internal photoemission‐voltage dependence from both interfaces with the capacitance‐voltage technique. Trapped holes have been produced in the SiO2 by vacuum ultraviolet (vuv) photons, x rays, and high‐field stressing. After irradiation under positive gate bias, trapped holes have been found to reside near the Si‐SiO2 interface with an upper limit of about 50 A determined for their centroid from this interface. After irradiation under negative bias, a similar situation was found to occur near the Al‐SiO2 interface; and in addition some positive charge was found approximately at the Si‐SiO2 interface. After high‐field stressing under negative bias, positive charge was found approximately at the Si‐SiO2 interface. The charge locating technique is described in detail as well as the implications of the results to radiation damage and insulator breakdown.

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