A Novel RF SOI LDMOS with a Raised Drift Region

Abstract In this paper, we propose a novel RF SOI LDMOS with a raised drift region (RDR). Using the process simulation and numerical simulation, we investigate deeply on breakdown characteristics and frequency characteristics of this novel device. Compared with the conventional RESURF device, the breakdown voltage and cutoff frequency of the RDR device are increased by 25% and 21%, respectively. The work of this paper has theoretical and practical significations to the research of a new generation of deep sub-micron high-performance radio frequency SOI integrated circuits.

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