Semi‐analytical computation and 3D modeling of the microwave photo‐induced load in CPW technology

To be faster and more precise than the numerical technique for the computation of the photo-induced plasma in semiconductor, an analytical solution has to be developed. In this article, the Hankel transform is used to simplify the solution of the differential equation of second order with nonsconstant coefficient, known as the diffusion equations. The resulting expression of the 3D carrier density includes all the physical parameters of the substrate and the laser beam as well. A parametric study was also feasible using the developed expressions. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1718–1721, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21754