H, He, and N implant isolation of n‐type GaN

The effect of ion‐implantation‐induced damage on the resistivity of n‐type GaN has been investigated. H, He, and N ions were studied. The resistivity as a function of temperature, implant concentration, and post‐implant annealing temperature has been examined. Helium implantation produced material with an as‐implanted resistivity of 1010 Ω‐cm. He‐implanted material remained highly resistive after an 800 °C furnace anneal. The damage associated with H implantation had a significant anneal stage at 250 °C and the details of the as‐implanted resistivity were sample dependent. N implants had to be annealed at 400 °C to optimize the resulting resistivity but were then thermally stable to over 800 °C. The 300 °C resistivity of thermally stabilized He‐ and N‐ implanted layers was 104 Ω‐cm, whereas for H‐implanted layers the 300 °C resistivity was less than 10 Ω‐cm.