Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8000 cm2/V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

[1]  K. Jenkins,et al.  Operation of graphene transistors at gigahertz frequencies. , 2008, Nano letters.

[2]  K. Shepard,et al.  Current saturation in zero-bandgap, top-gated graphene field-effect transistors. , 2008, Nature nanotechnology.

[3]  Xinran Wang,et al.  Atomic layer deposition of metal oxides on pristine and functionalized graphene. , 2008, Journal of the American Chemical Society.

[4]  Robert M. Wallace,et al.  Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics , 2008 .

[5]  K. Novoselov,et al.  Macroscopic graphene membranes and their extraordinary stiffness. , 2008, Nano letters.

[6]  G. Fudenberg,et al.  Ultrahigh electron mobility in suspended graphene , 2008, 0802.2389.

[7]  Yi Xuan,et al.  Atomic-layer-deposited nanostructures for graphene-based nanoelectronics , 2008 .

[8]  S. Xiao,et al.  Intrinsic and extrinsic performance limits of graphene devices on SiO2. , 2007, Nature nanotechnology.

[9]  S. Sarma,et al.  Measurement of scattering rate and minimum conductivity in graphene. , 2007, Physical review letters.

[10]  E. Williams,et al.  Atomic structure of graphene on SiO2. , 2007, Nano letters.

[11]  S. Sarma,et al.  A self-consistent theory for graphene transport , 2007, Proceedings of the National Academy of Sciences.

[12]  A. Neto,et al.  Making graphene visible , 2007, Applied Physics Letters.

[13]  Aachen,et al.  A Graphene Field-Effect Device , 2007, IEEE Electron Device Letters.

[14]  Andre K. Geim,et al.  Raman spectrum of graphene and graphene layers. , 2006, Physical review letters.

[15]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[16]  R. T. Yang,et al.  Ab initio molecular orbital study of adsorption of atomic hydrogen on graphite: Insight into hydrogen storage in carbon nanotubes , 2002 .

[17]  K. Kukli,et al.  Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources , 2000, Science.

[18]  M. Grieco,et al.  Aluminum Oxidation in Water , 1978 .

[19]  W. Fawcett,et al.  The Kinetics and Mechanism of Oxidation of Superpurity Aluminum in Dry Oxygen I . Apparatus Description and the Growth of “Amorphous” Oxide , 1966 .

[20]  A. S. Grove,et al.  General Relationship for the Thermal Oxidation of Silicon , 1965 .