The case of AC stress in the hot-carrier effect

During ac hot-carrier stress, the direction of the transient current flow is demonstrated to be important in device degradation as well as the amount of substrate current generated in transient periods.

[1]  K. Nakamura,et al.  Hot-Carrier Induced Degradation of N-MOSFET's in Inverter Operation , 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers.

[2]  Tetsuya Iizuka,et al.  Hot-carrier suppressed VLSI with submicron geometry , 1985, 1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[3]  Fu-Chieh Hsu,et al.  Hot-electron substrate-current generation during switching transients , 1985 .