Can 1/f noise in MOSFETs be reduced by gate oxide and channel optimization?

This contribution addresses several important topics about 1/f noise in MOSFETs for the 65 nm node. We show that a plasma nitridation technique can significantly improve the 1/f noise performances of the device providing that the insulator is thick enough. This result is explained by correlating the 1/f noise magnitude and the nitrogen concentration profile within the gate oxide. In a second time we investigate the effect of dopant dose and species in the substrate as well as the influence of channel orientation (110) and (100).