论文信息 - Suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs with reoxidized nitrided gate oxides

Suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs with reoxidized nitrided gate oxides

The authors report the use of rapid thermal reoxidized nitrided (RTN/RTO) gate oxides in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs to achieve excellent barrier properties against the boron penetration. In addition, excellent electrical characteristics including both on- and off-states are demonstrated. Results show that thin RTN/RTO gate oxide is a promising gate dielectric for dual-poly gate CMOS technology development.<<ETX>>

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