DLTS Studies of Neutron Camage in P-Type Silicon

Damage produced in p-type silicon by neutron irradiation at room temperature was studied by deep-level transient spectroscopy (DLTS). The production of three defects (Ev + 0.15, Ev + 0.34 and Ev + 0.45 eV) by neutron irradiation and the formation of two defects (Ev + 0.25 and Ev + 0.21 eV) during annealing were reported. It was found that many properties of the neutron damage were similar to those of the electron damage obtained by other works as far as the DLTS measurements are concerned. The DLTS measuements indicated no evidence for the production of defect clusters in the neutron damage. By comparing with the results previously obtained by the Hall effect measurements, it was found that the DLTS measurements mainly evaluated the properties of the point defects outside the clusters. The fact that the DLTS measurements did nto reflect the properties fo the defect clusters was ascribed to the reduction of majority carrier capture by defects inside the clusters due to the potential barrier formed by the cluster-space-charge regions.

[1]  A. Usami,et al.  IEEE Transactions on Nuclear Science, Vol. NS-28, No. 3, June ,981 CONPARISON OF NEUTRON AND 2 MEV ELECTRON DAMAGE IN N-TYPE SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY , 2022 .

[2]  A. Usami,et al.  Evaluation of interface states in MOS structures by DLTS with a bipolar rectangular weighting function , 1981 .

[3]  A. Usami,et al.  Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient Spectroscopy , 1979 .

[4]  James W. Corbett,et al.  Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons , 1977 .

[5]  L. Kimerling.  New Developments in Defect Studies in Semiconductors , 1976, IEEE Transactions on Nuclear Science.

[6]  D. Lang.  Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .

[7]  A. Usami,et al.  Effect of oxygen and copper on the defect cluster in neutron‐irradiated p‐type silicon , 1974 .

[8]  J. W. Walker,et al.  Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon , 1973 .

[9]  B. L. Gregory.  Minority Carrier Recombination in Neutron Irradiated Silicon , 1969 .

[10]  H. Stein.  PHOTOCONDUCTIVITY STUDY OF DIVACANCY FORMATION IN NEUTRON‐IRRADIATED Si , 1969 .

[11]  J. Lori,et al.  Characteristics of Neutron Damage in Silicon , 1968 .

[12]  H. Stein,et al.  INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN n- AND p-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION. , 1968 .

[13]  M. Bertolotti,et al.  EVIDENCE FOR DAMAGE REGIONS IN Si, GaAs, AND InSb SEMICONDUCTORS BOMBARDED WITH HIGH-ENERGY NEUTRONS. , 1967 .

[14]  R. E. Whan.  OXYGEN-DEFECT COMPLEXES IN NEUTRON-IRRADIATED SILICON , 1966 .

[15]  H. Stein.  COMPARISON OF NEUTRON AND GAMMA-RAY DAMAGE IN n-TYPE SILICON , 1966 .

[16]  B. R. Gossick,et al.  DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS , 1959 .

[17]  B. L. Gregory,et al.  Neutron Produced Trapping Centers in Junction Field Effect Transistors , 1971 .

[18]  H. Stein.  Electrical Studies of Neutron‐Irradiated p‐Type Silicon: Defect Structure and Annealing , 1968 .

[19]  H. Stein,et al.  ELECTRICAL STUDIES OF NEUTRON-IRRADIATED n-TYPE Si: DEFECT STRUCTURE AND ANNEALING. , 1967 .