1400 volt, 5 mΩ-cm2 SiC MOSFETs for high-speed switching

We have demonstrated 1400V SiC power MOSFETs with a specific on-resistance of 5 mΩ-cm2. Discrete SiC MOSFETs (4.5 mm × 4.5 mm) have been demonstrated with a total on-resistance of 30 mΩ. SiC MOSFETs were packaged and characterized for switching losses. When switched at 600V and 15A, SiC MOSFETs with size of 2.25mm × 4.5 mm have a total switching energy of 0.26 mJ per pulse. These devices were characterized in a buck converter to evaluate the device performance in switching applications. SiC gate oxide reliability is predicted to achieve lifetimes > 100 years at 250°C.

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