Fluorine-enhanced nitridation of silicon at low temperatures in a microwave plasma

A microwave plasma discharge at very low temperatures (200–250 °C) has been used for the growth of thin silicon oxynitride films suitable for gate dielectric applications. The addition of CHF3 as a source of fluorine enhances the growth rate. A x‐ray photoelectron spectroscopy study indicates the incorporation of fluorine (F/Si≂0.2) in the film. Electrical properties of the grown layers have been evaluated by the characterization of metal‐insulator‐semiconductor capacitors. Results have indicated the presence of negative charges in the insulator. The estimated charge density is lowest for the fluorinated film. The conduction mechanism in the films at room temperature appears to be Frenkel–Poole type.

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