论文信息 - Single, individual traps in MOSFETs

Single, individual traps in MOSFETs

The capture and emission of electrons and holes into and from single, individual interface traps are studied in micron-sized MOSFETs. The trapping process creates discrete switching in the source-drain resistance. The number of traps may be counted in quantized transients observed after pulsed filling of traps. The average rate time constants for the trapping process are consistent with Coulomb repulsive centers, i.e., acceptors near the conduction band edge and donors near the valence band edge of silicon. The capture and emission rates are strongly activated by an interfacial barrier. Individual traps induce Fermi level pinning in the 2-dimensional SiO2-Si system.

M. Schulz | A. Karmann | M Schulz | A Karmann

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