40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

4O-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/lnAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 V/sub pp/.