Yield and reliability of MNOS EEPROM products

MNOS electrically erasable and programmable read-only memory (EEPROM) products have been manufactured using 2- mu m CMOS fabrication technology, in which MNOS memory devices are composed of a 1.6-nm tunnel SiO/sub 2/ layer and a 28-nm Si/sub 3/N/sub 4/ layer. The Hitachi MNOS EEPROM family consists of a 64-kb EEPROM with static random access memory (SRAM) timing and three EEPROM on-chip microcomputers. Electrical and quality tests establish two basic reliability features: ten-year data retention and 10/sup 5/ erase/write cycle endurance. The MNOS EEPROM family yield has reached the same high level as that of SRAM products fabricated with the same 2- mu m CMOS technology. In addition, high-density low-cost MNOS EEPROM products are possible because of the high scalability and high yield attributable to their simple cell structure. >

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