Optical probing (EOFM / TRI): A large set of complementary applications for ultimate VLSI

Electro Optical Techniques (EOFM: Electro Optical Frequency Mapping and EOP: Electro Optical Probing) and Dynamic Light Emission Techniques (TRE: Time Resolved Emission and TRI: Time Resolved Imaging) are dynamic optical probing techniques widely used at IC level for design debug and defect localization purpose. They can pinpoint the origin of timing issue or logic fault in up to date CMOS devices. Each technique has its advantages and its drawbacks allowing a common set of applications and more specific ones. We have been involved in the development of the most advanced techniques related to EOFM and TRI on various devices (down to 28nm technology). What we can expect with each technique, which one to choose, what are the limitations are questions that must be answered regarding tooling cost and skills involved. Based on the understanding of the bases of each technique, their complementarities and their limitations have been identified. Even if these techniques can solve most of the issues we encountered, we can wonder if they can be applied on future technologies and this aspect will also be discussed.

[1]  P. Tangyunyong,et al.  Backside localization of open and shorted IC interconnections , 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).

[2]  P. Perdu,et al.  Signal propagation analysis by Digital Lock-in Time Resolved Imaging , 2012, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[3]  P. Perdu,et al.  New statistical post processing approach for precise fault and defect localization in TRI database acquired on complex VLSI , 2013, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

[4]  Jeremy A. Rowlette,et al.  Critical timing analysis in microprocessors using near-ir laser assisted device alteration (lada) , 2003, International Test Conference, 2003. Proceedings. ITC 2003..

[5]  A. Tosi,et al.  Hot-Carrier Photoemission in Scaled CMOS Technologies: A Challenge for Emission Based Testing and Diagnostics , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[6]  J. Kash,et al.  Dynamic internal testing of CMOS circuits using hot luminescence , 1997, IEEE Electron Device Letters.

[7]  R. Soref,et al.  Electrooptical effects in silicon , 1987 .

[8]  Massimo V. Fischetti,et al.  Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies , 2001, Microelectron. Reliab..

[9]  Philippe Perdu,et al.  Facing the defect characterization and localization challenges of bridge defects on a submicronic technology (45 nm and below) , 2010, Microelectron. Reliab..

[10]  Maryse Béguin,et al.  High performance thermography with InGaAs photon counting camera , 2012, Microelectron. Reliab..

[11]  A. Benigni,et al.  Time Resolved Imaging: From logical states to events, a new and efficient pattern matching method for VLSI analysis , 2011, Microelectron. Reliab..

[12]  H. P. Feuerbaum,et al.  Electron beam testing: Methods and applications , 1983 .

[13]  Mario Paniccia,et al.  Novel optical probing technique for flip chip packaged microprocessors , 1998, Proceedings International Test Conference 1998 (IEEE Cat. No.98CH36270).

[14]  Bruno Rouzeyre,et al.  When Failure Analysis Meets Side-Channel Attacks , 2010, CHES.

[15]  Kiyoshi Nikawa,et al.  New capabilities of OBIRCH method for fault localization and defect detection , 1997, Proceedings Sixth Asian Test Symposium (ATS'97).