论文信息 - Growth of Cu3Si from CuCl vapor deposition on Si(100) oriented wafers - 字舞流文

Growth of Cu3Si from CuCl vapor deposition on Si(100) oriented wafers

B. Gillot | G. Weber | D. Viale

[1] N. Lewis,et al. Active site formation in the direct process for methylchlorosilanes , 1986 .

[2] K. M. Carroll,et al. Diffusion of Copper in the Copper‐Silicon System , 1982 .

[3] L. Doraiswamy,et al. Studies in solid-solid reactions: Autocatalysis in the reduction of cuprous chloride by silicon , 1981 .

[4] J. Gibson,et al. Direct Evidence for 1 nm Pores in “Dry”Thermal SiO2 from High Resolution Transmission Electron Microscopy , 1980 .

[5] Eugene A. Irene,et al. Silicon Oxidation Studies: Some Aspects of the Initial Oxidation Regime , 1978 .

[6] R. Voorhoeve. Organohalosilanes. Precursors to Silicones , 1967 .

[7] R. Morrison,et al. Gas Permeation Study and Imperfection Detection of Thermally Grown and Deposited Thin Silicon Dioxide Films , 1962 .

[8] H. Kohlschütter,et al. Umsetzung von Silicium mit Kupfer(I)-chlorid. II , 1956 .

[9] H. Kohlschütter,et al. Zersetzung von Hexachlordisilan an Kupfer und in Glasgefäßen , 1955 .

[10] E. G. Rochow,et al. On the Mechanism of the Reaction between Methyl Chloride and Silicon-Copper , 1945 .