Recent Progress in the Growth of Highly Reflective Nitride-Based Distributed Bragg Reflectors and Their Use in Microcavities
暂无分享,去创建一个
Marc Ilegems | Eric Feltin | Nicolas Grandjean | J. Dorsaz | J.-F. Carlin | J. Carlin | E. Feltin | N. Grandjean | M. Ilegems | R. Butté | G. Christmann | J. Dorsaz | Raphaël Butté | Gabriel Christmann | N. Grandjean
[1] Catalano,et al. Room temperature lasing at blue wavelengths in gallium nitride microcavities , 1999, Science.
[2] H. Amano,et al. Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy , 1998 .
[3] J. Geske,et al. Low resistance intracavity-contacted oxide-aperture VCSELs , 1998, IEEE Photonics Technology Letters.
[4] Ratna Naik,et al. Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy , 2001 .
[5] Joan M. Redwing,et al. An optically pumped GaN–AlGaN vertical cavity surface emitting laser , 1996 .
[6] Oliver Ambacher,et al. Optical constants of epitaxial AlGaN films and their temperature dependence , 1997 .
[7] V. Kulakovskii,et al. Strong coupling in a single quantum dot–semiconductor microcavity system , 2004, Nature.
[8] S. Nakamura,et al. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes , 2000 .
[9] T Tawara,et al. Cavity polaritons in InGaN microcavities at room temperature. , 2004, Physical review letters.
[10] Joachim Piprek,et al. Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering , 1997 .
[11] M. S. Skolnick,et al. Angle-resonant stimulated polariton amplifier , 2000, Physical review letters.
[12] Stanley,et al. Measurement of cavity-polariton dispersion curve from angle resolved photoluminescence experiments. , 1994, Physical review letters.
[13] A. Nurmikko,et al. Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction , 2001 .
[14] T. Fisher,et al. Polarization-dependent phenomena in the reflectivity spectra of semiconductor quantum microcavities , 1997 .
[15] Tao Wang,et al. AlGaN‐based Bragg mirrors and hybrid microcavities for the ultra‐violet spectral region , 2005 .
[16] Takashi Jimbo,et al. MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors , 2002 .
[17] Yoshihisa Yamamoto,et al. Indistinguishable photons from a single-photon device , 2002, Nature.
[18] Yamamoto,et al. Spontaneous-emission coupling factor and mode characteristics of planar dielectric microcavity lasers. , 1993, Physical review. A, Atomic, molecular, and optical physics.
[19] Lionel Hirsch,et al. AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111) , 2002 .
[20] H. Kuo,et al. MOCVD growth of AlN/GaN DBR structures under various ambient conditions , 2004 .
[21] T. Brun. Scientists Supporting SSC Quoted Unfairly , 1993 .
[22] Yasuhiko Arakawa,et al. InGaN vertical microcavity LEDs with a Si-doped AlGaN/GaN distributed Bragg reflector , 2002 .
[23] Yasuhiko Arakawa,et al. Observation of enhanced spontaneous emission coupling factor in nitride-based vertical-cavity surface-emitting laser , 2002 .
[24] Jeremy J. Baumberg,et al. Room-temperature polariton lasers based on GaN microcavities , 2002 .
[25] O. Brandt,et al. Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001) , 2004 .
[26] A. Nurmikko,et al. Near ultraviolet optically pumped vertical cavity laser , 2000 .
[27] Kenichi Iga,et al. Vertical cavity surface-emitting laser with an AlGaAs/AlAs Bragg reflector , 1988 .
[28] Brian Thibeault,et al. Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers , 1993 .
[29] Marc Ilegems,et al. Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors , 2005 .
[30] Marc Ilegems,et al. Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers , 2005 .
[31] R. Burnham,et al. High reflectivity GaAs‐AlGaAs mirrors fabricated by metalorganic chemical vapor deposition , 1984 .
[32] R. Romestain,et al. Consequences of strong coupling between excitons and microcavity leaky modes , 2005 .
[33] Yoshihisa Yamamoto,et al. Efficient source of single photons: a single quantum dot in a micropost microcavity. , 2002 .
[34] Takashi Matsuoka,et al. Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN , 1997 .
[35] Fabrice Semond,et al. Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks , 2003 .
[36] Marc Ilegems,et al. Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode , 2005 .
[37] M. Asif Khan,et al. Reflective filters based on single‐crystal GaN/AlxGa1−xN multilayers deposited using low‐pressure metalorganic chemical vapor deposition , 1991 .
[38] K. Killeen,et al. Low resistance wavelength-reproducible p-type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy , 1993 .
[39] Y. Arakawa,et al. Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition , 1998 .
[40] Hui Yang,et al. Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates , 1998 .
[41] Larry A. Coldren,et al. Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire , 2000 .
[42] M. S. Skolnick,et al. High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm , 2004 .
[43] M. S. Skolnick,et al. Strong coupling phenomena in quantum microcavity structures , 1998 .
[44] R. Langer,et al. High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy , 1999 .
[45] Theodore D. Moustakas,et al. Distributed Bragg reflectors based on AlN/GaN multilayers , 1999 .
[46] J. Bloch,et al. High-temperature ultrafast polariton parametric amplification in semiconductor microcavities , 2001, Nature.
[47] J. Carlin,et al. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN , 2003 .
[48] A. Nurmikko,et al. Stress Engineering During Metalorganic Chemical Vapor Deposition of AlGaN/GaN Distributed Bragg Reflectors , 2001 .
[49] F. Kish,et al. A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser , 2000 .
[50] Anirban Bhattacharyya,et al. High reflectivity and crack-free AlGaN 'AlN ultraviolet distributed Bragg reflectors , 2002 .
[51] Takeshi Kamiya,et al. Lasing Emission from an In0.1Ga0.9N Vertical Cavity Surface Emitting Laser , 1998 .
[52] Marc Ilegems,et al. GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiency , 2003 .
[53] V. A. Semenov,et al. Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser , 1999 .
[54] K. Vahala. Optical microcavities : Photonic technologies , 2003 .
[55] Takeshi Kamiya,et al. Lasing Emission from an In_ Ga_ N Vertical Cavity Surface Emitting Laser , 1998 .
[56] Theodore D. Moustakas,et al. High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy , 2000 .
[57] Jean-Michel Gérard,et al. InAs quantum dots: artificial atoms for solid-state cavity-quantum electrodynamics , 2001 .
[58] H. Macleod,et al. Thin-Film Optical Filters , 1969 .
[59] Timothy J. Drummond,et al. AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs , 1995 .
[60] J. Carlin,et al. Selective oxidation of AlInN layers for current confinement in III–nitride devices , 2005 .
[61] C. Weisbuch,et al. Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends , 1998 .
[62] Yeong-Her Wang,et al. Resonant cavity light‐emitting diode , 1992 .