Bias point optimization for low power / low noise applications of advanced SiGe HBT

In this paper, the best trade-off between low power consumption and low noise performance of a commercial bipolar transistor is investigated. In a first step, SiGe HBTs featuring various geometries are benchmarked, focusing on DC characteristics (Gummel plot); this allows the selection of the best device to be measured in microwave range. On this transistor, several figure-of-merits (FoMs) such as cut-off frequencies, minimum noise figure, and available gain, are extracted for the entire DC I(V) characteristic. With the help of iso-curves, our study allows to select optimized biasing range, useful for designers to design Low Noise Amplifiers (LNAs) featuring both low power and low noise performance.

[1]  S. Weinreb,et al.  Design of Cryogenic SiGe Low-Noise Amplifiers , 2007, IEEE Transactions on Microwave Theory and Techniques.

[2]  J. Bock,et al.  SiGe bipolar technology for automotive radar applications , 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

[3]  Pascal Chevalier,et al.  Investigation of SiGe HBT potentialities under cryogenic temperature , 2009, 2009 Proceedings of the European Solid State Device Research Conference.

[4]  S. Decoutere,et al.  Speed - accuracy trade-off for measurement and characterization of the matching performance of SiGe:C HBTs, applied to a 200 GHz technology , 2005, Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005..

[5]  J.A.M. Geelen,et al.  An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[6]  A. Boudiaf,et al.  An accurate and repeatable technique for noise parameter measurements , 1993 .

[7]  M. Wurzer,et al.  SiGe bipolar technology with 3.9 ps gate delay , 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).