MOS Capacitor Deep Trench Isolation for CMOS image sensors
暂无分享,去创建一个
F. Leverd | F. Roy | B. Orlando | A. Tournier | C. Perrot | D. Pellissier-Tanon | A. Seignard | M. Rivoire | J.-P Carrere | F. Leverd | M. Rivoire | A. Seignard | B. Orlando | C. Perrot | J. Carrere | F. Roy | A. Tournier | D. Pellissier-Tanon | N. Virollet | G. Lu | N. Ahmed | G.-N Lu | B. Mamdy | N. Virollet | B. Mamdy | N. Ahmed
[1] Hiroshige Goto,et al. 7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[2] Joeri De Vos,et al. Backside illuminated hybrid FPA achieving low cross-talk combined with high QE , 2011 .
[3] Tae-Chan Kim,et al. Advanced image sensor technology for pixel scaling down toward 1.0µm (Invited) , 2008, 2008 IEEE International Electron Devices Meeting.
[4] Y. Kohyama,et al. Suppression of crosstalk by using backside deep trench isolation for 1.12μm backside illuminated CMOS image sensor , 2012, 2012 International Electron Devices Meeting.
[5] S. S. Park,et al. The analysis of dark signals in the CMOS APS imagers from the characterization of test structures , 2004 .