Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

[1]  M. Wagener,et al.  Intrinsic compensation of silicon-doped AlGaN , 2003 .

[2]  R. Davis,et al.  Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers , 2003 .

[3]  J. Keckes,et al.  Temperature dependence of stresses in GaN/AlN/6H–SiC(0001) structures: correlation between AlN buffer thickness and intrinsic stresses in GaN , 2002 .

[4]  F. Ponce,et al.  Electron holography studies of the charge on dislocations in GaN. , 2001, Physical review letters.

[5]  P. Vennégués,et al.  Phase separation in metalorganic vapor-phase epitaxy AlxGa(1−x)N films deposited on 6H–SiC , 2000 .

[6]  Sven Einfeldt,et al.  In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers , 2000 .

[7]  Naoki Kobayashi,et al.  Step-flow MOVPE of GaN on SiC substrates , 1998 .

[8]  R. Davis,et al.  Trends in residual stress for GaN/AlN/6H–SiC heterostructures , 1998 .

[9]  Robert F. Davis,et al.  Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates , 1997 .

[10]  James S. Speck,et al.  Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films , 1996 .

[11]  Robert F. Davis,et al.  GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers , 1995 .

[12]  Theeradetch Detchprohm,et al.  Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain , 1992 .

[13]  M. Leroux,et al.  Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy , 2000 .