Large domain validity of MOSFET microwave-rectification response

This paper deals with the “in band” and “out band” rectification of a Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) device and proposes a semi-empirical model to predict the rectification effect in all transistor regions. The modeling method is based on two variables Taylor series expansion of ID(VGS, VDS) which shows a modification in drain current due to a gate Radio-Frequency (RF) voltage. This modification depends on the transconductance and conductance derivatives. When the transistor operates in the non-saturation and linear region the conductance becomes an important nonlinear source. However, it can be neglected in the saturation region of the MOSFET.

[1]  R. A. Amadori,et al.  Prediction Methods for the Susceptibility of Solid State Devices to Interference and Degradation From Microwave Energy , 1973 .

[2]  Ognjen Jović,et al.  High-Voltage PMOS Transistor Model for Prediction of Susceptibility to Conducted Interference , 2011, IEEE Transactions on Electromagnetic Compatibility.

[3]  Jean-Pierre Raskin,et al.  Analytical expressions for distorsion of SOI MOSFETs using the Volterra series , 2004 .

[4]  Bumman Kim,et al.  Linearity analysis of CMOS for RF application , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[5]  R. Richardson,et al.  Microwave-Rectification RFI Response in Field-Effect Transistors , 1979, IEEE Transactions on Electromagnetic Compatibility.

[6]  C. Turchetti,et al.  A non-quasi-static analysis of the transient behavior of the long-channel most valid in all regions of operation , 1987, IEEE Transactions on Electron Devices.

[7]  S. H. Jen,et al.  Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz , 1999 .

[8]  Y. Tsividis Operation and modeling of the MOS transistor , 1987 .

[9]  Hyungcheol Shin,et al.  A simple and analytical parameter-extraction method of a microwave MOSFET , 2002 .

[10]  Bumman Kim,et al.  Linearity analysis of CMOS for RF application , 2002, IMS 2002.

[11]  T.H. Hubing,et al.  The Electromagnetic Compatibility of Integrated Circuits—Past, Present, and Future , 2009, IEEE Transactions on Electromagnetic Compatibility.

[12]  E. Sicard,et al.  Towards an EMC roadmap for Integrated Circuits , 2008, 2008 Asia-Pacific Symposium on Electromagnetic Compatibility and 19th International Zurich Symposium on Electromagnetic Compatibility.